| PART |
Description |
Maker |
| MSM531655E-XXGS-K MSM531655E-XXTS-K MSM531655E |
524,288-Double Words x 32-bit or 1,048,576-Words x 16-bit MaskROM, 8Double Word x 32-Bit or 16Word x 16-Bit/Page Mode MASKROM
|
OKI electronic componets
|
| CY7S1061G30-10ZXIES |
16-Mbit (1 M words 16 bit) Static RAM with Deep-Sleep Feature and Error-Correcting Code (ECC)
|
Cypress
|
| THM321020S-10 THM321020S-80 THM321020SG-10 THM3210 |
Chip-on-Glass (COG) Technology, 16 Characters x 2 Lines
1048576 WORDS x 32 BIT DYNAMIC RAM MODULE
1,048,576 WORDS x 32 BIT DYNAMIC RAM MODULE
1/048/576 WORDS x 32 BIT DYNAMIC RAM MODULE
|
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
| W5232 W523X W5231 W5233 W5234 |
Power Speech LOW VOLTAGE ADPCM VOICE SYNTHESIZER
ADPCM Synthesizer w/ 4 triggers, STA, STB, STC, R0 (6 seconds @6.7K)
ADPCM Synthesizer w/ 4 triggers, STA, STB, STC, R0 (12 seconds @6.7K)
ADPCM Synthesizer w/ 4 triggers, STA, STB, STC, R0 (9 seconds @6.7K)
ADPCM Synthesizer w/ 4 triggers, STA, STB, STC, R0 (3 seconds @6.7K)
|
WINBOND[Winbond]
Winbond Electronics
|
| IS42S16100C1 IS42S16100C1-5T IS42S16100C1-5TL IS42 |
512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM
|
ISSI[Integrated Silicon Solution, Inc]
ISSI[Integrated Silicon Solution Inc]
|
| IS42S16100 IS42S16100-7T |
512K Words x 16 Bits x 2 Banks (16-MBIT)
SYNCHRONOUS DYNAMIC RAM
|
ICS
|
| THM321000S-10 THM321000S-80 THM321000SG-10 THM3210 |
Chip-on-Glass (COG) Technology, 16 Characters x 2 Lines
1,048,576 WORDS x 32 BIT DYNAMIC RAM MODULE
1/048/576 WORDS x 32 BIT DYNAMIC RAM MODULE
|
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
| IS42S16128-8T IS42S16128-12T |
Chassis Mount and Din Rail Filters RoHS Compliant: Yes
128K Words x 16 Bits x 2 Banks (4-MBIT) SYNCHRONOUS DYNAMIC RAM
|
Integrated Silicon Solution, Inc.
DRAM
|
| AM41PDS3224D |
32 Mbit (2 M x 16-Bit) CMOS 1.8 Volt-only. Simultaneous Operation Page Mode Flash Memory and 4 Mbit (512 K x 8-Bit/256 K x 16-Bit) Static RAM (Preliminary) 32兆位米16位）的CMOS电压1.8只。同时采取行动，页面模式闪存兆位12x 8-Bit/256x 16位），静态存储器（初步）
Stacked Multi-Chip Package (MCP) Flash Memory and SRAM
|
Advanced Micro Devices
|
| HY51V17403HGJ-5 HY51V17403HGJ-6 HY51V17403HGJ-7 HY |
4,194,304 words x 4 bit EDO RAM, 3.3V, 50ns
4,194,304 words x 4 bit EDO RAM, 3.3V, 60ns
4,194,304 words x 4 bit EDO RAM, 3.3V, 70ns
4,194,304 words x 4 bit EDO RAM, 3.3V, 50ns, low power
4,194,304 words x 4 bit EDO RAM, 3.3V, 60ns, low power
4,194,304 words x 4 bit EDO RAM, 3.3V, 70ns, low power
|
Hynix Semiconductor
|
| MSM538052E MSM538052E-XXGS-K MSM538052E-XXRS MSM53 |
524,288-Words x 16-bit or 1,048,576-Bytes x 8-bit MaskROM, 8Words x 16-Bit or 16Bytes x 8-Bit/Page Mode MASKROM
|
OKI electronic componets
|
| IS42S32160A IS42S32160A-75B IS42S32160A-75BI IS42S |
4M Words x 32 Bits x 4 Banks (512-MBIT) SYNCHRONOUS DYNAMIC RAM
16M X 32 SYNCHRONOUS DRAM, 6 ns, PBGA90
|
Integrated Silicon Solution, Inc
天津新技术产业园区管理委员会
INTEGRATED SILICON SOLUTION INC
|
